AlN barrier increases output current from GaN/Si HEMTs
2 June 2011AlN barrier increases output current from GaN/Si HEMTs
Researchers based in France have developed high-electron-mobility transistors (HEMTs) using gallium nitride (GaN) on silicon substrates with output current densities exceeding 2A/mm [F. Medjdoub et al, IEEE Electron Device Letters, published online 16 May 2011]. The team from Institut d'Electronique, de Microélectronique et de Nanotechnologie of France’s Centre national de la recherche scientifique (IEMN/CNRS) comments that this “represents, to the best of our knowledge, the highest value ever achieved for GaN-on-Si HEMTs.”
The devices used ultra-thin aluminum nitride (AlN) barrier layers to maximize carrier densities in the channel, reducing on-resistance.
Nitride semiconductor material has a number of properties that make it an attractive base for microwave power electronics applications. Among these characteristics, the large polarization charge can be used to create two-dimensional electron gases (2DEGs) with high carrier density and hence low resistance. The wide bandgaps of nitride semiconductors also enable high power densities, and these materials’ high thermal conductivity can be used to dissipate the generated heat effectively.
In conventional HEMTs, an aluminum gallium nitride (AlGaN) barrier layer is deposited on a GaN buffer, creating a 2DEG at the interface. As the barrier layer becomes thinner, the charge density decreases. Unfortunately, thinner barrier layers are needed to access high-frequency performance.
A further disadvantage is that thinner barriers make it more difficult to isolate the gate electrode from the channel, requiring the use of gate dielectric insulation, rather than a simpler Schottky contact, to reduce gate leakage currents. The processes used to apply dielectrics or to bring the electrode closer to the channel (recessing) tend to degrade the reliability of devices.
High-aluminum-content barriers of indium aluminum nitride (InAlN) or even AlN, which has the highest spontaneous polarization of all the III–N materials, have lately been used to maximize 2DEG charge densities with promising results, suggesting useful performance up to W-band microwave frequencies (75–110GHz).
Another recent development in nitride semiconductors is their growth on large-diameter silicon substrates (up to 6 inch/150mm). This suggests the possibility of low-cost, large market adoption of nitride semiconductor electronics.
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The wide bandgaps of nitride semiconductors also enable high power densities, and these materials' high thermal conductivity can be used to dissipate the generated heat effectively. In conventional HEMTs, an aluminum gallium nitride (AlGaN) barrier
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